This course presents in-depth discussion and analysis of metal-oxide-semiconductor field effect transistors (MOSFETs) and bipolar junction transistors (BJTs) including the equilibrium characteristics, modes of operation, switching and current amplifying behaviors.
At the end of this course learners will be able to:
1. Understand and analyze metal-oxide-semiconductor (MOS) device
2. Understand and analyze MOS field effect transistor (MOSFET)
3. Understand and analyze bipolar junction transistor (BJT)
Este curso forma parte de Programa Especializado - Semiconductor Devices
Transistor - Field Effect Transistor and Bipolar Junction Transistor
ofrecido por
Programa - Qué aprenderás en este curso
Semana
14 horas para completar
Metal-Oxide-Semiconductor (MOS) Device
In this module on MOS devices, we will cover the following topics:, MOS device structure, energy band diagram for MOS device at equilibrium, Flat band condition, Accumulation, Depletion, and Inversion of MOS under bias, Energy band diagram and charge distribution for MOS in inversion, Quantitative model and relevant parameters, Energy band diagram with channel bias, Inversion layer charge, and Effect on threshold voltage of MOS in non-equilibrium, C-V characteristics: Charge distribution under different biasing conditions, C-V characteristics: Frequency dependence, Effects of oxide charge on flat band and threshold voltages in non-ideal MOS, and Types of oxide charge in non-ideal MOS.
8 videos (Total 90 minutos), 2 readings, 1 quiz
8 videos
MOS at Equilibrium10m
Basic Operation of MOS13m
Analysis of MOS Operation9m
Analysis of MOS Operation (Part 2)10m
MOS in Non-Equilibrium15m
Capacitance-Voltage Characteristics13m
Non-Ideal MOS14m
2 lecturas
Module Topics2m
Materials and Constants10m
1 ejercicio de práctica
Homework #1s
Semana
23 horas para completar
MOS Field Effect Transistor (MOSFET)
In this module on MOSFETs (metal-oxide semiconductor field effect transistors), we cover the following topics: History of development of MOSFETs, Device structure, Device types, Circuit symbols, Long channel theory, I-V characteristics, Modes of operation, Channel length modulation, Body bias effect, Bulk charge effect, Sub-threshold conduction, Source/drain charge sharing in short channel devices, Drain induced barrier lowering, Subsurface punchthrough, Mobility degradation, Velocity saturation, Drain current saturation, Scaling of drain current with channel length, and Scaling of speed with channel length.
7 videos (Total 65 minutos), 2 readings, 1 quiz
7 videos
Basic Operation of MOSFET12m
Advanced Operation of MOSFET 19m
Advanced Operation of MOSFET 28m
Short Channel Effects 18m
Short Channel Effects 212m
Short Channel MOSFET5m
2 lecturas
Module Topics2m
Materials and Constants10m
1 ejercicio de práctica
Homework #2s
Semana
35 horas para completar
Bipolar Junction Transistor (BJT)
In this module on BJTs (bipolar junction transistors), we will cover the following topics: BJT Device structures, Energy band diagrams, Active bias, Leakage current, Recombination in base, Hoe injection, Non-uniform doping in base, Current gain, Switching with BJT, Single heterojunction bipolar transistor, Double heterojunction bipolar transistor, Non-uniform material, Early effect, Emitter bias dependence, High-level injection, Base, emitter and collector transit times, and RC time constant.
6 videos (Total 79 minutos), 2 readings, 2 quizzes
6 videos
Base-Emitter Current12m
Basic Operation of BJT9m
Heterojunction Bipolar Transistor (HBT)16m
Non-Ideal Behavior13m
Frequency Response10m
2 lecturas
Module Topics2m
Materials and Constants10m
1 ejercicio de práctica
Homework #3s
Instructor
Wounjhang Park
ProfessorElectrical, Computer, and Energy Engineering
Acerca de Universidad de Colorado en Boulder
CU-Boulder is a dynamic community of scholars and learners on one of the most spectacular college campuses in the country. As one of 34 U.S. public institutions in the prestigious Association of American Universities (AAU), we have a proud tradition of academic excellence, with five Nobel laureates and more than 50 members of prestigious academic academies.
Acerca del programa especializado Semiconductor Devices
This Semiconductor Devices specialization is designed to be a deep dive into the fundamentals of the electronic devices that form the backbone of our current integrated circuits technology. You will gain valuable experience in semiconductor physics, pn junctions, metal-semiconductor contacts, bipolar junction transistors, metal-oxide-semiconductor (MOS) devices, and MOS field effect transistors.
Specialization Learning Outcomes:
*Learn fundamental mechanisms of electrical conduction in semiconductors
*Understand operating principles of basic electronic devices including pn junction, metal-semiconductor contact, bipolar junction transistors and field effect transistors
*Analyze and evaluate the performance of basic electronic devices
*Prepare for further analysis of electronic and photonic devices based on semiconductors
Preguntas Frecuentes
¿Cuándo podré acceder a las lecciones y tareas?
Una vez que te inscribes para obtener un Certificado, tendrás acceso a todos los videos, cuestionarios y tareas de programación (si corresponde). Las tareas calificadas por compañeros solo pueden enviarse y revisarse una vez que haya comenzado tu sesión. Si eliges explorar el curso sin comprarlo, es posible que no puedas acceder a determinadas tareas.
¿Qué recibiré si me suscribo a este Programa especializado?
Cuando te inscribes en un curso, obtienes acceso a todos los cursos que forman parte del Programa especializado y te darán un Certificado cuando completes el trabajo. Se añadirá tu Certificado electrónico a la página Logros. Desde allí, puedes imprimir tu Certificado o añadirlo a tu perfil de LinkedIn. Si solo quieres leer y visualizar el contenido del curso, puedes auditar el curso sin costo.
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